NTLUS3A90PZTBG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTLUS3A90PZTBG
Marking Code: AD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.3
nC
trⓘ - Rise Time: 15.7
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062
Ohm
Package: UDFN6
NTLUS3A90PZTBG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTLUS3A90PZTBG
Datasheet (PDF)
..1. Size:131K onsemi
ntlus3a90pztag ntlus3a90pztbg.pdf 
NTLUS3A90PZPower MOSFET-20 V, -5.0 A, mCoolt Single P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 1.6x1.6 Package ESD Protected 62 mW @ -4.5 V These Devices
3.1. Size:139K onsemi
ntlus3a90pz.pdf
NTLUS3A90PZPower MOSFET-20 V, -5.0 A, mCoolt Single P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 1.6x1.6 Package ESD Protected 62 mW @ -4.5 V These Devices
7.1. Size:127K onsemi
ntlus3a39pztbg ntlus3a39pz ntlus3a39pztag.pdf
NTLUS3A39PZPower MOSFET-20 V, -5.2 A, Single P-Channel, ESD,1.6x1.6x0.55 mm UDFN mCoolt PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving MOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
7.2. Size:133K onsemi
ntlus3a40pztag ntlus3a40pztbg.pdf
NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices
7.3. Size:143K onsemi
ntlus3a18pztbg ntlus3a18pztcg ntlus3a18pz ntlus3a18pztag.pdf
NTLUS3A18PZPower MOSFET-20 V, -8.2 A, Single P-Channel,2.0x2.0x0.55 mm mCoolt UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalConduction http://onsemi.com Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingMOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX ESD Diode-Protected Gate18 mW @ -4.5 V These Devices are Pb-Fre
7.4. Size:141K onsemi
ntlus3a40pz.pdf
NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.65 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.65 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices
7.5. Size:222K onsemi
ntlus3a18pz.pdf
NTLUS3A18PZMOSFET Power, Single,P-Channel, UDFN,2.0x2.0x0.55 mm-20 V, -8.2 Awww.onsemi.comFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving18 mW @ -4.5 V Ultra Low RDS(on)25 mW @ -2.5 V-20 V -8.2 A ESD Diode-Protected Gate50 mW @
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