NTMD6N03R2G Datasheet. Specs and Replacement

Type Designator: NTMD6N03R2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOIC-8

NTMD6N03R2G substitution

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NTMD6N03R2G datasheet

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NTMD6N03R2G

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6A, Dual N--Channel SOIC--8 http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery Life 30 V 24 m @VGS =10V 6.0 A -- RDS(on) = 0.024 , VGS = 10 V (Typ) -- RDS(on) = 0.030 , VGS = 4.5 V (Typ) N-... See More ⇒

 4.1. Size:160K  onsemi
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NTMD6N03R2G

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8... See More ⇒

 7.1. Size:74K  onsemi
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NTMD6N03R2G

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanch... See More ⇒

 7.2. Size:78K  onsemi
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NTMD6N03R2G

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature S... See More ⇒

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Detailed specifications: NTLUS3C18PZ, NTLUS4930N, NTLUS4C12N, NTLUS4C16N, NTMD4184PFR2G, NTMD4884NFR2G, NTMD4N03, NTMD5836NLR2G, AON6380, NTMD6P02R2G, NTMFD4901NF, NTMFD4902NF, NTMFD4C20N, NTMFD4C85N, NTMFD4C86N, NTMFD4C87N, NTMFD4C88N

Keywords - NTMD6N03R2G MOSFET specs

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