All MOSFET. NTMFD4C88N Datasheet

 

NTMFD4C88N Datasheet and Replacement


   Type Designator: NTMFD4C88N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: DFN8
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NTMFD4C88N Datasheet (PDF)

 ..1. Size:123K  onsemi
 ntmfd4c88n.pdf pdf_icon

NTMFD4C88N

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

 6.1. Size:117K  onsemi
 ntmfd4c87n.pdf pdf_icon

NTMFD4C88N

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

 6.2. Size:130K  onsemi
 ntmfd4c85n.pdf pdf_icon

NTMFD4C88N

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

 6.3. Size:128K  onsemi
 ntmfd4c86n.pdf pdf_icon

NTMFD4C88N

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

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Keywords - NTMFD4C88N MOSFET datasheet

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