NTMFD4C88N MOSFET Datasheet: N-Ch, 30V, 11.7A. Full specification with pinout and replacement list

NTMFD4C88N Specs and Replacement

   Type Designator: NTMFD4C88N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: DFN8

NTMFD4C88N substitution

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NTMFD4C88N datasheet

..1. Size:123K onsemi
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NTMFD4C88N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30... See More ⇒

6.1. Size:117K onsemi
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NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Q1 Top FET Compliant 20 A 3... See More ⇒

6.2. Size:130K onsemi
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NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 mW @ 10 V Q1 Top FET Compliant 25 A 3... See More ⇒

6.3. Size:128K onsemi
ntmfd4c86n.pdf pdf_icon

NTMFD4C86N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30... See More ⇒

Detailed specifications: NTMD6N03R2G , NTMD6P02R2G , NTMFD4901NF , NTMFD4902NF , NTMFD4C20N , NTMFD4C85N , NTMFD4C86N , NTMFD4C87N , AO4407 , NTMFS4108NT1G , NTMFS4119NT1G , NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G .