NTMFS4821NT1G PDF and Equivalents Search

 

NTMFS4821NT1G PDF Specs and Replacement


   Type Designator: NTMFS4821NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00695 Ohm
   Package: SO-8FL
 

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NTMFS4821NT1G PDF Specs

 ..1. Size:137K  onsemi
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NTMFS4821NT1G

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application ... See More ⇒

 4.1. Size:136K  onsemi
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NTMFS4821NT1G

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application ... See More ⇒

 6.1. Size:116K  onsemi
 ntmfs4826ne.pdf pdf_icon

NTMFS4821NT1G

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55 ... See More ⇒

 6.2. Size:115K  onsemi
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NTMFS4821NT1G

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V ... See More ⇒

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Detailed specifications: NTMFS4119NT1G , NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G , NTMFS4744NT1G , AO3407 , NTMFS4823NT1G , NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G .

Keywords - NTMFS4821NT1G MOSFET specs

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