NTMFS4821NT1G Datasheet. Specs and Replacement

Type Designator: NTMFS4821NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00695 Ohm

Package: SO-8FL

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NTMFS4821NT1G substitution

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NTMFS4821NT1G datasheet

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NTMFS4821NT1G

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application ... See More ⇒

 4.1. Size:136K  onsemi
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NTMFS4821NT1G

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application ... See More ⇒

 6.1. Size:116K  onsemi
 ntmfs4826ne.pdf pdf_icon

NTMFS4821NT1G

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55 ... See More ⇒

 6.2. Size:115K  onsemi
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NTMFS4821NT1G

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V ... See More ⇒

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Detailed specifications: NTMFS4119NT1G, NTMFS4120NT1G, NTMFS4121NT1G, NTMFS4122NT1G, NTMFS4701NT1G, NTMFS4707NT1G, NTMFS4708NT1G, NTMFS4744NT1G, 4N60, NTMFS4823NT1G, NTMFS4825NFET1G, NTMFS4833NST1G, NTMFS4833NT1G, NTMFS4834NT1G, NTMFS4835NT1G, NTMFS4836NT1G, NTMFS4837NHT1G

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