NTMFS4845NT1G Spec and Replacement
Type Designator: NTMFS4845NT1G
Marking Code: 4845N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.89
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id| ⓘ - Maximum Drain Current: 13.7
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 25.6
nC
tr ⓘ - Rise Time: 48.4
nS
Cossⓘ -
Output Capacitance: 650
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
SO-8FL
NTMFS4845NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS4845NT1G Specs
..1. Size:107K onsemi
ntmfs4845nt1g.pdf 
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application No... See More ⇒
4.1. Size:137K onsemi
ntmfs4845n.pdf
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application N... See More ⇒
6.1. Size:106K onsemi
ntmfs4847nat1g ntmfs4847nt1g.pdf
NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Not... See More ⇒
6.2. Size:107K onsemi
ntmfs4849nt1g.pdf
NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note... See More ⇒
6.3. Size:106K onsemi
ntmfs4846nt1g.pdf
NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application Not... See More ⇒
6.4. Size:136K onsemi
ntmfs4847n.pdf
NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application No... See More ⇒
6.5. Size:138K onsemi
ntmfs4841nh.pdf
NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A... See More ⇒
6.6. Size:145K onsemi
ntmfs4841n.pdf
NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4... See More ⇒
6.7. Size:108K onsemi
ntmfs4841nht1g.pdf
NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A ... See More ⇒
6.8. Size:115K onsemi
ntmfs4841nt1g.pdf
NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.... See More ⇒
6.9. Size:137K onsemi
ntmfs4849n.pdf
NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Not... See More ⇒
6.10. Size:137K onsemi
ntmfs4846n.pdf
NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application No... See More ⇒
Detailed specifications: NTMFS4835NT1G
, NTMFS4836NT1G
, NTMFS4837NHT1G
, NTMFS4837NT1G
, NTMFS4839NHT1G
, NTMFS4839NT1G
, NTMFS4841NHT1G
, NTMFS4841NT1G
, IRF1405
, NTMFS4846NT1G
, NTMFS4847NAT1G
, NTMFS4847NT1G
, NTMFS4849NT1G
, NTMFS4851NT1G
, NTMFS4852NT1G
, NTMFS4854NST1G
, NTMFS4897NFT1G
.
Keywords - NTMFS4845NT1G MOSFET specs
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