All MOSFET. NTMFS4851NT1G Datasheet

 

NTMFS4851NT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS4851NT1G
   Marking Code: 4851N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 39.8 nS
   Cossⓘ - Output Capacitance: 333 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: SO-8FL

 NTMFS4851NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4851NT1G Datasheet (PDF)

 ..1. Size:107K  onsemi
 ntmfs4851nt1g.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Note

 4.1. Size:137K  onsemi
 ntmfs4851n.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Not

 6.1. Size:107K  onsemi
 ntmfs4852nt1g.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

 6.2. Size:110K  onsemi
 ntmfs4854nst1g.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

 6.3. Size:137K  onsemi
 ntmfs4852n.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

 6.4. Size:120K  onsemi
 ntmfs4854ns.pdf

NTMFS4851NT1G NTMFS4851NT1G

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

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