NTMFS4933NT1G Datasheet. Specs and Replacement

Type Designator: NTMFS4933NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.06 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 3230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: SO-8FL

NTMFS4933NT1G substitution

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NTMFS4933NT1G datasheet

 ..1. Size:108K  onsemi
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NTMFS4933NT1G

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2... See More ⇒

 4.1. Size:118K  onsemi
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NTMFS4933NT1G

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2... See More ⇒

 6.1. Size:121K  onsemi
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NTMFS4933NT1G

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP... See More ⇒

 6.2. Size:112K  onsemi
ntmfs4936nt1g.pdf pdf_icon

NTMFS4933NT1G

NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen ... See More ⇒

Detailed specifications: NTMFS4923NET1G, NTMFS4925NE, NTMFS4925NT1G, NTMFS4926NE, NTMFS4926NT1G, NTMFS4927NCT1G, NTMFS4927NT1G, NTMFS4931N, IRF740, NTMFS4934NT1G, NTMFS4935NBT1G, NTMFS4935NCT1G, NTMFS4935NT1G, NTMFS4936NT1G, NTMFS4937NT1G, NTMFS4939NT1G, NTMFS4941NT1G

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