NTMFS4936NT1G Datasheet. Specs and Replacement

Type Designator: NTMFS4936NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.6 nS

Cossⓘ - Output Capacitance: 1014 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: SO-8FL

NTMFS4936NT1G substitution

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NTMFS4936NT1G datasheet

 ..1. Size:112K  onsemi
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NTMFS4936NT1G

NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen ... See More ⇒

 4.1. Size:113K  onsemi
ntmfs4936n-d.pdf pdf_icon

NTMFS4936NT1G

NTMFS4936N Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON... See More ⇒

 4.2. Size:173K  onsemi
ntmfs4936n ntmfs4936nc.pdf pdf_icon

NTMFS4936NT1G

NTMFS4936N, NTMFS4936NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 79 A Features http //onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft 3.8 mW @ 10 V Recovery, Provides Schottky-Like Performance 30 V 79 A The... See More ⇒

 6.1. Size:121K  onsemi
ntmfs4939n-d.pdf pdf_icon

NTMFS4936NT1G

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP... See More ⇒

Detailed specifications: NTMFS4927NCT1G, NTMFS4927NT1G, NTMFS4931N, NTMFS4933NT1G, NTMFS4934NT1G, NTMFS4935NBT1G, NTMFS4935NCT1G, NTMFS4935NT1G, 50N06, NTMFS4937NT1G, NTMFS4939NT1G, NTMFS4941NT1G, NTMFS4943NT1G, NTMFS4946N, NTMFS4982NF, NTMFS4983NF, NTMFS4985NF

Keywords - NTMFS4936NT1G MOSFET specs

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