NTMFS4939NT1G Datasheet. Specs and Replacement

Type Designator: NTMFS4939NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 642 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SO-8FL

NTMFS4939NT1G substitution

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NTMFS4939NT1G datasheet

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NTMFS4939NT1G

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP... See More ⇒

 4.1. Size:121K  onsemi
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NTMFS4939NT1G

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP... See More ⇒

 4.2. Size:171K  onsemi
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NTMFS4939NT1G

NTMFS4939N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 53 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V Compliant 30 V 53 A 8.0 mW @ 4.5 V ... See More ⇒

 6.1. Size:112K  onsemi
ntmfs4936nt1g.pdf pdf_icon

NTMFS4939NT1G

NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen ... See More ⇒

Detailed specifications: NTMFS4931N, NTMFS4933NT1G, NTMFS4934NT1G, NTMFS4935NBT1G, NTMFS4935NCT1G, NTMFS4935NT1G, NTMFS4936NT1G, NTMFS4937NT1G, IRFZ44, NTMFS4941NT1G, NTMFS4943NT1G, NTMFS4946N, NTMFS4982NF, NTMFS4983NF, NTMFS4985NF, NTMFS4C01N, NTMFS4C03N

Keywords - NTMFS4939NT1G MOSFET specs

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