All MOSFET. NTMFS4H01N Datasheet

 

NTMFS4H01N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS4H01N
   Marking Code: 4H01N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 3718 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: SO-8FL

 NTMFS4H01N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4H01N Datasheet (PDF)

 ..1. Size:81K  onsemi
 ntmfs4h01n.pdf

NTMFS4H01N NTMFS4H01N

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications

 0.1. Size:84K  onsemi
 ntmfs4h01nf.pdf

NTMFS4H01N NTMFS4H01N

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T

 5.1. Size:89K  onsemi
 ntmfs4h013nf.pdf

NTMFS4H01N NTMFS4H01N

NTMFS4H013NFPower MOSFET25 V, 269 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOT

 6.1. Size:86K  onsemi
 ntmfs4h02nf.pdf

NTMFS4H01N NTMFS4H01N

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)

 6.2. Size:84K  onsemi
 ntmfs4h02n.pdf

NTMFS4H01N NTMFS4H01N

NTMFS4H02NPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceshttp://onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications4.5

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK4094

 

 
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