NTMFS5834NLT1G Datasheet. Specs and Replacement

Type Designator: NTMFS5834NLT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56.4 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: DFN5

NTMFS5834NLT1G substitution

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NTMFS5834NLT1G datasheet

 ..1. Size:104K  onsemi
ntmfs5834nlt1g.pdf pdf_icon

NTMFS5834NLT1G

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A Qualified and PPAP Capable 13.6 mW @ 4.5 V ... See More ⇒

 3.1. Size:112K  onsemi
ntmfs5834nl nvmfs5834nl.pdf pdf_icon

NTMFS5834NLT1G

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6... See More ⇒

 3.2. Size:74K  onsemi
ntmfs5834nl.pdf pdf_icon

NTMFS5834NLT1G

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6... See More ⇒

 6.1. Size:113K  onsemi
ntmfs5830nl.pdf pdf_icon

NTMFS5834NLT1G

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @ ... See More ⇒

Detailed specifications: NTMFS4C13N, NTMFS4C35N, NTMFS4H01N, NTMFS4H01NF, NTMFS4H02N, NTMFS4H02NF, NTMFS5830NLT1G, NTMFS5832NLT1G, STP75NF75, NTMFS5844NLT1G, NTMFS5C404NL, NTMFS5C404NLT, NTMFS5C410NL, NTMFS5C410NLT, NTMFS5C423NL, NTMFS5C442NL, NTMFS5C442NLT

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