NTMS4800NR2G Datasheet. Specs and Replacement

Type Designator: NTMS4800NR2G  📄📄 

Marking Code: 4800N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 7.7 nC

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOIC-8

NTMS4800NR2G substitution

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NTMS4800NR2G datasheet

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NTMS4800NR2G

NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V ... See More ⇒

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NTMS4800NR2G

NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V ... See More ⇒

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NTMS4800NR2G

NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri... See More ⇒

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NTMS4800NR2G

NTMS4802N Power MOSFET 30 V, 18 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V 30 V 18 A DC-DC Converters 5.5 mW @ 4.5 V Synchronous MOSFET ... See More ⇒

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Detailed specifications: NTMS4176PR2G, NTMS4177PR2G, NTMS4404NR2, NTMS4503NR2, NTMS4700NR2, NTMS4705NR2G, NTMS4706NR2, NTMS4706NR2G, 4N60, NTMS4801NR2G, NTMS4802NR2G, NTMS4807NR2G, NTMS4816NR2G, NTMS4872NR2G, NTMS4873NFR2G, NTMS4916NR2G, NTMS4917NR2G

Keywords - NTMS4800NR2G MOSFET specs

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