NTMS4N01R2G Datasheet. Specs and Replacement

Type Designator: NTMS4N01R2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO-8

NTMS4N01R2G substitution

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NTMS4N01R2G datasheet

 ..1. Size:77K  onsemi
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NTMS4N01R2G

NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N-Channel Enhancement-Mode Single SO-8 Package Features http //onsemi.com High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency 4.2 AMPERES, 20 VOLTS Miniature SO-8 Surface Mount Package Saving Board Space; Mounting Information for the SO-8 Package is Provided 0.045 W @ VGS = 4.5 V IDSS Specified at Eleva... See More ⇒

 9.1. Size:136K  onsemi
ntms4916n.pdf pdf_icon

NTMS4N01R2G

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A... See More ⇒

 9.2. Size:88K  onsemi
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NTMS4N01R2G

NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri... See More ⇒

 9.3. Size:86K  onsemi
ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4N01R2G

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m... See More ⇒

Detailed specifications: NTMS4807NR2G, NTMS4816NR2G, NTMS4872NR2G, NTMS4873NFR2G, NTMS4916NR2G, NTMS4917NR2G, NTMS4937NR2G, NTMS4939NR2G, IRF520, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, NTMS5P02R2G, NTMS5P02R2SG, NTMS7N03R2G, NTMSD2P102LR2, NTMSD3P102R2

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