All MOSFET. NTP6413ANG Datasheet

 

NTP6413ANG Datasheet and Replacement


   Type Designator: NTP6413ANG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO-220
 

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NTP6413ANG Datasheet (PDF)

 ..1. Size:113K  onsemi
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NTP6413ANG

NTB6413AN, NTP6413AN,NVB6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 28 mW @ 10 V 42 AQualified and PPAP Capable The

 ..2. Size:1420K  cn vbsemi
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NTP6413ANG

NTP6413ANGwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

 5.1. Size:132K  onsemi
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NTP6413ANG

NTB6413AN, NTP6413AN,NVB6413ANMOSFET Power,N-Channel100 V, 42 A, 28 mWwww.onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-C

 5.2. Size:143K  onsemi
ntb6413an ntp6413an.pdf pdf_icon

NTP6413ANG

NTB6413AN, NTP6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 28 mW @ 10 V 42 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG

Datasheet: NTP5860N , NTP5863NG , NTP5864NG , NTP60N06 , NTP60N06L , NTP6410ANG , NTP6411ANG , NTP6412ANG , IRF630 , NTP65N02R , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 , NTP75N06L , NTP85N03 , NTP8G202N .

Keywords - NTP6413ANG MOSFET datasheet

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