NTTFS4937NTAG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTTFS4937NTAG
Marking Code: 4937
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.86
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.7
nC
trⓘ - Rise Time: 21.2
nS
Cossⓘ -
Output Capacitance: 893
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
WDFN8
NTTFS4937NTAG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTTFS4937NTAG
Datasheet (PDF)
..1. Size:112K onsemi
nttfs4937ntag.pdf 
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
4.1. Size:194K onsemi
nttfs4937n.pdf
NTTFS4937NMOSFET Power, Single,N-Channel, m8FL30 V, 75 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.5 mW @ 10 V30 V 75 ACompliant7.0 mW @ 4.5 VA
4.2. Size:111K onsemi
nttfs4937n-d.pdf
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
6.1. Size:195K onsemi
nttfs4932n.pdf
NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA
6.2. Size:113K onsemi
nttfs4932ntag.pdf
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
6.3. Size:127K onsemi
nttfs4930n.pdf
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
6.4. Size:111K onsemi
nttfs4939n-d.pdf
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
6.5. Size:193K onsemi
nttfs4939n.pdf
NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA
6.6. Size:111K onsemi
nttfs4939ntag.pdf
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
6.7. Size:116K onsemi
nttfs4930ntag.pdf
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
6.8. Size:112K onsemi
nttfs4932n-d.pdf
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
