All MOSFET. NTTFS4C25N Datasheet

 

NTTFS4C25N Datasheet and Replacement


   Type Designator: NTTFS4C25N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: WDFN8
 

 NTTFS4C25N substitution

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NTTFS4C25N Datasheet (PDF)

 ..1. Size:115K  onsemi
nttfs4c25n.pdf pdf_icon

NTTFS4C25N

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

 0.1. Size:119K  1
nttfs4c25ntag.pdf pdf_icon

NTTFS4C25N

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

 7.1. Size:121K  1
nttfs4c05ntag.pdf pdf_icon

NTTFS4C25N

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V

 7.2. Size:118K  1
nttfs4c10ntag.pdf pdf_icon

NTTFS4C25N

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5

Datasheet: NTTFS4939NTAG , NTTFS4941NTAG , NTTFS4985NF , NTTFS4C05N , NTTFS4C06N , NTTFS4C08N , NTTFS4C10N , NTTFS4C13N , CS150N03A8 , NTTFS4H05N , NTTFS4H05NTAG , NTTFS4H07N , NTTFS5116PLTAG , NTTFS5811NLTAG , NTTFS5820NLTAG , NTTFS5826NLTAG , NTTS2P02R2 .

History: IRFBA1405PPBF | SI6466ADQ | SSF6014 | SSF5NS70UF | WMS032N04LG2 | KMB4D8DN55Q

Keywords - NTTFS4C25N MOSFET datasheet

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 NTTFS4C25N equivalent finder
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