CEB6030L Specs and Replacement
Type Designator: CEB6030L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ -
Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
CEB6030L datasheet
..1. Size:82K cet
cep6030l ceb6030l.pdf 
CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒
8.2. Size:421K cet
cep6036 ceb6036.pdf
CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot... See More ⇒
9.1. Size:399K cet
cep6060l ceb6060l.pdf
CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒
9.2. Size:420K cet
cep6060n ceb6060n.pdf
CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒
9.3. Size:381K cet
cep60n10 ceb60n10.pdf
CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒
9.4. Size:434K cet
cep6086l ceb6086l.pdf
CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE ... See More ⇒
9.5. Size:418K cet
cep6086 ceb6086.pdf
CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par... See More ⇒
9.6. Size:609K cet
cep60n06g ceb60n06g.pdf
CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒
9.7. Size:421K cet
cep6042 ceb6042.pdf
CEP6042/CEB6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 118A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒
9.8. Size:629K cet
cep6056 ceb6056.pdf
CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒
9.9. Size:357K inchange semiconductor
ceb6086.pdf
isc N-Channel MOSFET Transistor CEB6086 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: NTY100N10, NTZD3154NT1G, NTZD3155CT1G, NTZS3151PT1G, 3SK290, AO4400, BUZ48, CEP6030L, IRFB7545, ECX10N20, FHP1906A, FIR5N60FG, FNK30H150, GPT09N50, GPT09N50D, HY1707P, HY1707M
Keywords - CEB6030L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
