FHP1906A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP1906A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
FHP1906A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP1906A Datasheet (PDF)
fhp1906a.pdf
N N-CHANNEL MOSFET FHP1906A MAIN CHARACTERISTICS FEATURES ID 100A Low gate charge VDSS 60V Crss ( 275pF) Low Crss (typical 275pF ) Rdson-typ @Vgs=10V 5m Fast switching Qg-typ 82nC 100% 100% avalanche tested dv/dt Improved dv/dt
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFR1010Z
History: IRFR1010Z
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918