3N156 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 3N156
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 65 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 600 Ohm
   Package: TO-206AF

3N156 Transistor Equivalent Substitute - MOSFET Cross-Reference Search