3SK295 Specs and Replacement
Type Designator: 3SK295
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.025 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 0.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SC61AA
3SK295 substitution
- MOSFET ⓘ Cross-Reference Search
3SK295 datasheet
3sk295.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
3sk294.pdf
3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 20 fF (typ.) rss Low noise figure NF = 1.4dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V ... See More ⇒
3sk293.pdf
3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 16 fF (typ.) rss Low noise figure NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V... See More ⇒
3sk291.pdf
3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance Low reverse transfer capacitance C = 0.016 pF (typ.) rss Low noise figure NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.... See More ⇒
Detailed specifications: 3N60AF, 3N60F, 3N60G, 3N80A, 3N80AF, 3SK195, 3SK263, 3SK264, 7N65, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317, 3SK319, 3SK323
Keywords - 3SK295 MOSFET specs
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