MSAFX40N30A Specs and Replacement

Type Designator: MSAFX40N30A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: COOLPACK2

MSAFX40N30A substitution

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MSAFX40N30A datasheet

 ..1. Size:34K  microsemi
 msafx40n30a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX40N30A Features 300 Volts Ultrafast body diode 40 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 85 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL... See More ⇒

 9.1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX76N07A Features 70 Volts Ultrafast body diode 76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL ... See More ⇒

 9.2. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev... See More ⇒

 9.3. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX20N60A Features 600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure 350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance N-CHANNEL Very low thermal resistance... See More ⇒

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Detailed specifications: 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317, 3SK319, 3SK323, IRF4905, 40P03, 4AK17, 4N60A, 4N60AF, 4N60G, 4N80A, 4N80AF, 50N02

Keywords - MSAFX40N30A MOSFET specs

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