All MOSFET. MSAFX40N30A Datasheet

 

MSAFX40N30A Datasheet and Replacement


   Type Designator: MSAFX40N30A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 180 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: COOLPACK2
 

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MSAFX40N30A Datasheet (PDF)

 ..1. Size:34K  microsemi
msafx40n30a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX40N30AFeatures300 Volts Ultrafast body diode40 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 9.1. Size:33K  microsemi
msafx76n07a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX76N07AFeatures70 Volts Ultrafast body diode76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 9.2. Size:37K  microsemi
10n90a msafx10n90a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAFX10N90AFeatures900 Volts Ultrafast body diode10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Rev

 9.3. Size:34K  microsemi
20n60a msafx20n60a.pdf pdf_icon

MSAFX40N30A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance

Datasheet: 3SK296 , 3SK297 , 3SK298 , 3SK299 , 3SK300 , 3SK317 , 3SK319 , 3SK323 , IRF4905 , 40P03 , 4AK17 , 4N60A , 4N60AF , 4N60G , 4N80A , 4N80AF , 50N02 .

History: HFS730 | SSW60R028S2E | IRHM7360 | FTK4828F | NCE0157A2 | PTP20N60A | PT676BA

Keywords - MSAFX40N30A MOSFET datasheet

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