5N65AF
MOSFET. Datasheet pdf. Equivalent
Type Designator: 5N65AF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4
Ohm
Package:
TO-220F
5N65AF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5N65AF
Datasheet (PDF)
..1. Size:373K nell
5n65a 5n65af 5n65f 5n65g.pdf
RoHS 5N65 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 650Volts)DESCRIPTIOND The Nell 5N65 is a three-terminal silicon Ddevice with current conduction capabilityof 5A, fast switching speed, low on-stateresistance, breakdown voltage rating of 650V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
9.1. Size:103K international rectifier
irfib5n65a.pdf
PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita
9.2. Size:235K international rectifier
irfib5n65apbf.pdf
PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S
9.3. Size:143K vishay
sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
9.4. Size:141K vishay
irfib5n65a sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
9.5. Size:618K feihonltd
fhp15n65a fhf15n65a.pdf
N N-CHANNEL MOSFET FHP15N65A /FHF15N65A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 650V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.46 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
9.6. Size:424K wuxi china
cs5n65a8h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
9.7. Size:417K wuxi china
cs5n65a7h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
9.8. Size:837K wuxi china
cs5n65a4.pdf
Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
9.9. Size:837K wuxi china
cs5n65a3.pdf
Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
9.10. Size:869K cn hmsemi
hms15n65a.pdf
HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
9.11. Size:1381K cn vgsemi
hckd5n65am2.pdf
HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
9.12. Size:274K inchange semiconductor
irfib5n65a.pdf
iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
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