6680A PDF and Equivalents Search

 ..1. Size:140K  sztuofeng
 6680a.pdf

Shen zhen TuoFeng industrial co., LTD 6680A N-Channel Enhancement Mode MOSFET Features Pin Description S 30V/50A, D RDS(ON)=8m (typ.) @ VGS=10V D S G RDS(ON)=10m (typ.) @ VGS=4.5V G Super High Dense Cell Design IPAK DPAK Reliable and Rugged TO-251 TO-252 Avalanche Rated D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management i... See More ⇒

 0.1. Size:102K  fairchild semi
 fds6680a.pdf

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint... See More ⇒

 0.2. Size:327K  fairchild semi
 fdd6680as.pdf

April 2008 FDD6680AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low ... See More ⇒

 0.3. Size:982K  fairchild semi
 fds6680as.pdf

May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low... See More ⇒

 0.4. Size:200K  fairchild semi
 fdd6680a.pdf

February 2000 FDD6680A N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V. that has been especially tailored to minimize the on-state resistance and y... See More ⇒

 0.5. Size:229K  onsemi
 fds6680a.pdf

FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using ON Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate... See More ⇒

 0.6. Size:852K  onsemi
 fds6680as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.7. Size:196K  ape
 ap6680agm.pdf

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra ... See More ⇒

 0.8. Size:94K  ape
 ap6680agm-hf.pdf

AP6680AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ... See More ⇒

 0.9. Size:287K  inchange semiconductor
 fdd6680as.pdf

isc N-Channel MOSFET Transistor FDD6680AS FEATURES Drain Current I =55A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =10.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 0.10. Size:287K  inchange semiconductor
 fdd6680a.pdf

isc N-Channel MOSFET Transistor FDD6680A FEATURES Drain Current I =56A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒