6N60F Datasheet. Specs and Replacement
Type Designator: 6N60F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-251
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6N60F datasheet
..1. Size:457K nell
6n60a 6n60af 6n60f 6n60g.pdf 
RoHS 6N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon D D device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such ... See More ⇒
0.1. Size:75K 1
h06n60u h06n60e h06n60f.pdf
Spec. No. MOS200402 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code U Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme t... See More ⇒
0.2. Size:316K st
stp6n60fi.pdf
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V ... See More ⇒
0.4. Size:151K st
stp6n60f.pdf
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP6N60FI 600 V ... See More ⇒
0.5. Size:302K crhj
cs6n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
0.6. Size:413K crhj
cs6n60f a9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
0.7. Size:306K crhj
cs16n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒
0.8. Size:302K crhj
cs6n60f a9h-g.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H-G General Description VDSS 600 V CS6N60F A9H-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒
0.11. Size:547K silan
svf6n60mj svf6n60f svf6n60d.pdf
SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit... See More ⇒
0.12. Size:231K lzg
cs6n60f.pdf
BRF6N60(CS6N60F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. DS dv/dt Features Low R Low gate charge Low C... See More ⇒
0.13. Size:679K way-on
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf
WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60F WMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa ... See More ⇒
0.14. Size:669K way-on
wml36n60f2 wmk36n60f2 wmn36n60f2 wmm36n60f2 wmj36n60f2.pdf
WML36N60F2, WM F2 MK36N60F WMN3 N60F2, WM F2 36N60F2, WMM36N MJ36N60F 600V 0.087 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET ffering... See More ⇒
0.15. Size:413K wuxi china
cs6n60fa9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
0.16. Size:302K wuxi china
cs6n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
0.17. Size:694K convert
csfr6n60f csfr6n60k csfr6n60u csfr6n60d.pdf
CSFR6N60F,CSFR6N60K nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR6N60U,CSFR6N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package In... See More ⇒
0.18. Size:776K convert
cs16n60f cs16n60p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS... See More ⇒
0.19. Size:3712K first semi
fir6n60fg.pdf
FIR6N60FG N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 6 A PD(TC=25 ) 85 W RDS(ON) 1.4 G Features D S Fast Switching g Schematic dia ram Low ON Resistance(Rdson 1.6 ) D Low Gate Charge (Typical Data 22nC) Low Reverse transfer capacitances(Typical 14pF) G 100% Single Pulse avalanche energy Test S Marking Diagram Applications Powe... See More ⇒
0.20. Size:827K cn hmsemi
hm16n60f.pdf
VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati... See More ⇒
Detailed specifications: 65N06A, 65N06H, 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, STP65NF06, 6N60G, 6N80A, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B
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