AMA423P Datasheet and Replacement
Type Designator: AMA423P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.8 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: DFN2X2-8
AMA423P substitution
AMA423P Datasheet (PDF)
ama423p.pdf
Analog Power AMA423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)42 @ VGS = -4.5V -6.6 Low thermal impedance-20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-driveDFN2x2-8Typical Applications: Battery Powered Instruments Portable
ama421p.pdf
Analog Power AMA421PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = -4.5V -8.8 Low thermal impedance -2034 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS
ama420n.pdf
Analog Power AMA420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 4.5V15.0 Low thermal impedance 2011 @ VGS = 2.5V13.5 Fast switching speed DFN2X2 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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