AMF920NE Specs and Replacement

Type Designator: AMF920NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DFN2X5-6

AMF920NE substitution

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AMF920NE datasheet

 ..1. Size:171K  analog power
 amf920ne.pdf pdf_icon

AMF920NE

Analog Power AMF920NE Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 4.5V 11 battery-powered products ... See More ⇒

 9.1. Size:371K  analog power
 amf922ne.pdf pdf_icon

AMF920NE

Analog Power AMF922NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 12 @ VGS = 4.5V 14 Low thermal impedance 20 14 @ VGS = 2.5V 13 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM ... See More ⇒

 9.2. Size:371K  analog power
 amf924ne.pdf pdf_icon

AMF920NE

Analog Power AMF924NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 9.5 @ VGS = 4.5V 16 Low thermal impedance 20 13 @ VGS = 2.5V 13 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

Detailed specifications: AMD510C, AMD530C, AMD531C, AMD532C, AMD533CE, AMD534C, AMD534CE, AMD540CE, IRFP250N, AMF922NE, AMF924NE, AMR430N, AMR432N, AMR434N, AMR460N, AMR490N, AMR492N

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