All MOSFET. AMF920NE Datasheet

 

AMF920NE Datasheet and Replacement


   Type Designator: AMF920NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.3 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN2X5-6
 

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AMF920NE Datasheet (PDF)

 ..1. Size:171K  analog power
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AMF920NE

Analog Power AMF920NEDual N-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 4.5V 11battery-powered products

 9.1. Size:371K  analog power
amf922ne.pdf pdf_icon

AMF920NE

Analog Power AMF922NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 4.5V14 Low thermal impedance 2014 @ VGS = 2.5V13 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:371K  analog power
amf924ne.pdf pdf_icon

AMF920NE

Analog Power AMF924NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9.5 @ VGS = 4.5V16 Low thermal impedance 2013 @ VGS = 2.5V13 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Datasheet: AMD510C , AMD530C , AMD531C , AMD532C , AMD533CE , AMD534C , AMD534CE , AMD540CE , AON7408 , AMF922NE , AMF924NE , AMR430N , AMR432N , AMR434N , AMR460N , AMR490N , AMR492N .

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