All MOSFET. AMF924NE Datasheet

 

AMF924NE MOSFET. Datasheet pdf. Equivalent


   Type Designator: AMF924NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN2X5-6

 AMF924NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AMF924NE Datasheet (PDF)

 ..1. Size:371K  analog power
 amf924ne.pdf

AMF924NE AMF924NE

Analog Power AMF924NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9.5 @ VGS = 4.5V16 Low thermal impedance 2013 @ VGS = 2.5V13 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:371K  analog power
 amf922ne.pdf

AMF924NE AMF924NE

Analog Power AMF922NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 4.5V14 Low thermal impedance 2014 @ VGS = 2.5V13 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:171K  analog power
 amf920ne.pdf

AMF924NE AMF924NE

Analog Power AMF920NEDual N-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 22 @ VGS = 4.5V 11battery-powered products

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