All MOSFET. APL502J Datasheet

 

APL502J MOSFET. Datasheet pdf. Equivalent


   Type Designator: APL502J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT-227

 APL502J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APL502J Datasheet (PDF)

 ..1. Size:80K  ape
apl502j.pdf

APL502J
APL502J

APL502J500V 52A 0.090LINEAR MOSFETLinear Mosfets are optimized for applications operating in the Linearregion where concurrent high voltage and high current can occur atnear DC conditions (>100 msec)."UL Recognized"ISOTOPD Higher FBSOA Popular SOT-227 PackageG Higher Power DissipationSMAXIMUM RATINGS All Ratings: TC = 25C unless oth

 8.1. Size:139K  microsemi
apl502b2g apl502lg.pdf

APL502J
APL502J

APL502B2(G) APL502L(G)500V, 58A, 0.090 *G Denotes RoHS Compliant, Pb Free Terminal Finish.LINEAR MOSFET TMT-MaxTO-264Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). D Higher FBSOA Popular T-MAX or TO-264 Package G Higher Power Dissip

 9.1. Size:36K  ape
apl501j.pdf

APL502J
APL502J

DGAPL501J 500V 43.0A 0.12WSISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APL501J UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C43AmpsIDM, lLM Pulsed Drain C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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