APL502J MOSFET. Datasheet pdf. Equivalent
Type Designator: APL502J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 568 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 1280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT-227
APL502J Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APL502J Datasheet (PDF)
apl502j.pdf
APL502J500V 52A 0.090LINEAR MOSFETLinear Mosfets are optimized for applications operating in the Linearregion where concurrent high voltage and high current can occur atnear DC conditions (>100 msec)."UL Recognized"ISOTOPD Higher FBSOA Popular SOT-227 PackageG Higher Power DissipationSMAXIMUM RATINGS All Ratings: TC = 25C unless oth
apl502b2g apl502lg.pdf
APL502B2(G) APL502L(G)500V, 58A, 0.090 *G Denotes RoHS Compliant, Pb Free Terminal Finish.LINEAR MOSFET TMT-MaxTO-264Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). D Higher FBSOA Popular T-MAX or TO-264 Package G Higher Power Dissip
apl501j.pdf
DGAPL501J 500V 43.0A 0.12WSISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APL501J UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C43AmpsIDM, lLM Pulsed Drain C
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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