APL502LG Datasheet and Replacement
Type Designator: APL502LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 730 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-247 TO-264
- MOSFET Cross-Reference Search
APL502LG Datasheet (PDF)
apl502b2g apl502lg.pdf

APL502B2(G) APL502L(G)500V, 58A, 0.090 *G Denotes RoHS Compliant, Pb Free Terminal Finish.LINEAR MOSFET TMT-MaxTO-264Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). D Higher FBSOA Popular T-MAX or TO-264 Package G Higher Power Dissip
apl502j.pdf

APL502J500V 52A 0.090LINEAR MOSFETLinear Mosfets are optimized for applications operating in the Linearregion where concurrent high voltage and high current can occur atnear DC conditions (>100 msec)."UL Recognized"ISOTOPD Higher FBSOA Popular SOT-227 PackageG Higher Power DissipationSMAXIMUM RATINGS All Ratings: TC = 25C unless oth
apl501j.pdf

DGAPL501J 500V 43.0A 0.12WSISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APL501J UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C43AmpsIDM, lLM Pulsed Drain C
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: RJK0331DPB-00
Keywords - APL502LG MOSFET datasheet
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History: RJK0331DPB-00



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