APL502LG Specs and Replacement
Type Designator: APL502LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 730 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
APL502LG substitution
- MOSFET ⓘ Cross-Reference Search
APL502LG datasheet
apl502b2g apl502lg.pdf
APL502B2(G) APL502L(G) 500V, 58A, 0.090 *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR MOSFET TM T-Max TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). D Higher FBSOA Popular T-MAX or TO-264 Package G Higher Power Dissip... See More ⇒
apl502j.pdf
APL502J 500V 52A 0.090 LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). "UL Recognized" ISOTOP D Higher FBSOA Popular SOT-227 Package G Higher Power Dissipation S MAXIMUM RATINGS All Ratings TC = 25 C unless oth... See More ⇒
apl501j.pdf
D G APL501J 500V 43.0A 0.12W S ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APL501J UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 C 43 Amps IDM, lLM Pulsed Drain C... See More ⇒
Detailed specifications: AMR860N, AMR930N, AMS930N, APF7619WS, APL1001J, APL501J, APL502B2G, APL502J, 12N60, APL602B2G, APL602J, APL602LG, AUIRF1010EZSTRL, AUIRF1010ZSTRL, AUIRF1324STRL, AUIRF1404ZSTRL, AUIRF1405ZS-7P
Keywords - APL502LG MOSFET specs
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