All MOSFET. AUIRFS8409-7P Datasheet

 

AUIRFS8409-7P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AUIRFS8409-7P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 305 nC
   trⓘ - Rise Time: 148 nS
   Cossⓘ - Output Capacitance: 2140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
   Package: TO-263CA-7

 AUIRFS8409-7P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFS8409-7P Datasheet (PDF)

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