All MOSFET. AUIRFU8403 Datasheet

 

AUIRFU8403 Datasheet and Replacement


   Type Designator: AUIRFU8403
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 66 nC
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 477 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-251
 

 AUIRFU8403 substitution

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AUIRFU8403 Datasheet (PDF)

 ..1. Size:279K  international rectifier
 auirfr8403 auirfu8403.pdf pdf_icon

AUIRFU8403

AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L

 ..2. Size:686K  infineon
 auirfr8403 auirfu8403.pdf pdf_icon

AUIRFU8403

AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A

 5.1. Size:453K  international rectifier
 auirfr8401 auirfu8401.pdf pdf_icon

AUIRFU8403

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID

 5.2. Size:292K  international rectifier
 auirfr8405 auirfu8405.pdf pdf_icon

AUIRFU8403

AUIRFR8405AUTOMOTIVE GRADE AUIRFU8405Features HEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ. 1.65ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 1.98ml Lead-Free, RoHS Compliantl Automotive Qualified *ID (Silicon Limited) 211ADescriptionSpecifically designed for A

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