MTP15N15 Datasheet and Replacement
Type Designator: MTP15N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-220AB
MTP15N15 substitution
MTP15N15 Datasheet (PDF)
mtp15n06vl.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VL/DDesigner's Data SheetMTP15N06VLTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more tha
mtp15n06v.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VDesigner's Data SheetMTP15N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew
Datasheet: AUIRLR3410TRL , AUIRLR3705ZTR , AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , 13N50 , MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 .
History: VS6016HS-A
Keywords - MTP15N15 MOSFET datasheet
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History: VS6016HS-A



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