MTP15N15 Specs and Replacement
Type Designator: MTP15N15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-220AB
MTP15N15 substitution
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MTP15N15 datasheet
mtp15n06vl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06VL/D Designer's Data Sheet MTP15N06VL TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 15 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more tha... See More ⇒
mtp15n06v.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06V Designer's Data Sheet MTP15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 15 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new... See More ⇒
Detailed specifications: AUIRLR3410TRL , AUIRLR3705ZTR , AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , 5N60 , MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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