IPB019N06L3 Datasheet and Replacement

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB019N06L3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

IPB019N08N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 100% avalanche tested7 Pb-free plating; RoHS compliant Industrial qual

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IPB010N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.0 mW 100% avalanche testedID 180 A Superior thermal resistanceQoss 228 nC N-channel, normal levelQG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB017N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB017N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

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TypeIPB014N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for synchronous rectificationVDS 60 V 100% avalanche testedRDS(on),max 1.4 mW Superior thermal resistanceID 180 A N-channel, normal levelQOSS nC 119 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB017N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB017N10N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB015N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB015N08N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate ch

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IPB017N10N5LFMOSFETD-PAK 7pinOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applicationstab Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB015N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo