IPB049N06L3 Datasheet: MOSFET, N-Ch, 60V, 80A. Full specification with pinout and replacement list

IPB049N06L3 Datasheet. Specs and Replacement

Type Designator: IPB049N06L3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: D2PAK TO-263

IPB049N06L3 substitution

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IPB049N06L3 datasheet

..1. Size:683K infineon
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..2. Size:258K inchange semiconductor
ipb049n06l3.pdf pdf_icon

Isc N-Channel MOSFET Transistor IPB049N06L3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

6.1. Size:1130K infineon
ipb049n08n5.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB049N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB049N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr... See More ⇒

6.2. Size:205K inchange semiconductor
ipb049n08n5.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB049N08N5 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒