IPB049NE7N3 Datasheet. Specs and Replacement

Type Designator: IPB049NE7N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 805 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: D2PAK TO-263

IPB049NE7N3 substitution

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IPB049NE7N3 datasheet

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IPB049NE7N3

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IPB049NE7N3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB049NE7N3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI... See More ⇒

 7.1. Size:683K  infineon
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IPB049NE7N3

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 7.2. Size:1130K  infineon
ipb049n08n5.pdf pdf_icon

IPB049NE7N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB049N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB049N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr... See More ⇒

Detailed specifications: IPB027N10N3, IPB029N06N3, IPB031NE7N3, IPB033N10N5LF, IPB037N06N3, IPB039N04L, IPB041N04N, IPB049N06L3, 60N06, IPB054N06N3, IPB05CN10N, IPB065N10N3, IPB067N08N3, IPB081N06L3, IPB083N10N3, IPB083N15N5LF, IPB097N08N3

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