All MOSFET. IPB60R380P6 Datasheet

 

IPB60R380P6 Datasheet and Replacement


   Type Designator: IPB60R380P6
   Marking Code: 6R380P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: D2PAK TO-263
 

 IPB60R380P6 substitution

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IPB60R380P6 Datasheet (PDF)

 ..1. Size:2540K  infineon
 ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf pdf_icon

IPB60R380P6

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 ..2. Size:258K  inchange semiconductor
 ipb60r380p6.pdf pdf_icon

IPB60R380P6

Isc N-Channel MOSFET Transistor IPB60R380P6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 5.1. Size:1211K  infineon
 ipb60r380c6.pdf pdf_icon

IPB60R380P6

MOSFET+ =L9D - PA

 5.2. Size:1368K  infineon
 ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf pdf_icon

IPB60R380P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

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Datasheet: IPB60R160P6 , IPB60R180C7 , IPB60R180P7 , IPB60R190P6 , IPB60R230P6 , IPB60R280P7 , IPB60R330P6 , IPB60R360P7 , STP75NF75 , IPB60R600P6 , IPP60R360P7 , IPS110N12N3 , IPS12CN10L , IPS60R3K4CE , IPS60R400CE , IPS65R400CE , IPS70R1K4CE .

History: 2N7261U | VP0106

Keywords - IPB60R380P6 MOSFET datasheet

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