IPB60R380P6 Specs and Replacement

Type Designator: IPB60R380P6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: D2PAK TO-263

IPB60R380P6 substitution

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IPB60R380P6 datasheet

 ..1. Size:2540K  infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf pdf_icon

IPB60R380P6

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒

 ..2. Size:258K  inchange semiconductor
ipb60r380p6.pdf pdf_icon

IPB60R380P6

Isc N-Channel MOSFET Transistor IPB60R380P6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 5.1. Size:1211K  infineon
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IPB60R380P6

MOSFET + =L9D - PA... See More ⇒

 5.2. Size:1368K  infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf pdf_icon

IPB60R380P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒

Detailed specifications: IPB60R160P6, IPB60R180C7, IPB60R180P7, IPB60R190P6, IPB60R230P6, IPB60R280P7, IPB60R330P6, IPB60R360P7, 7N65, IPB60R600P6, IPP60R360P7, IPS110N12N3, IPS12CN10L, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IPS70R1K4CE

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