IRFS7434 Specs and Replacement
Type Designator: IRFS7434
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 195 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1540 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
IRFS7434 substitution
- MOSFET ⓘ Cross-Reference Search
IRFS7434 datasheet
irfs7434pbf irfsl7434pbf.pdf
StrongIRFET IRFS7434PbF IRFSL7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications 320A ID (Silicon Limited) l Resonant mode power supplies S ID (Package Limited) 19... See More ⇒
irfs7434.pdf
isc N-Channel MOSFET Transistor IRFS7434 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
irfs7434-7ppbf.pdf
StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0m G max Resonant mode power supplies ID (Silicon Limited... See More ⇒
Detailed specifications: IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L, IPU135N03L, IPU60R3K4CE, IRF135S203, IRFS4510, K4145, IRFS7437, IRFS7530, IRFS7537, IRFS7540, IRFS7730, IRFS7734, IRFS7762, IRFS7787
Keywords - IRFS7434 MOSFET specs
IRFS7434 cross reference
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IRFS7434 substitution
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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