All MOSFET. IRFU3709ZC Datasheet

 

IRFU3709ZC MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU3709ZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: IPAK TO-251

 IRFU3709ZC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU3709ZC Datasheet (PDF)

 ..1. Size:300K  international rectifier
irfr3709zcpbf irfu3709zcpbf.pdf

IRFU3709ZC
IRFU3709ZC

PD - 96046IRFR3709ZCPbFIRFU3709ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

 ..2. Size:262K  inchange semiconductor
irfu3709zc.pdf

IRFU3709ZC
IRFU3709ZC

isc N-Channel MOSFET Transistor IRFU3709ZCFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 5.1. Size:265K  international rectifier
irfr3709zpbf irfu3709zpbf.pdf

IRFU3709ZC
IRFU3709ZC

PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

 5.2. Size:219K  international rectifier
irfu3709z.pdf

IRFU3709ZC
IRFU3709ZC

PD - 94712IRFR3709ZIRFU3709ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m: 17nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche

 5.3. Size:265K  infineon
irfr3709zpbf irfu3709zpbf.pdf

IRFU3709ZC
IRFU3709ZC

PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

 5.4. Size:262K  inchange semiconductor
irfu3709z.pdf

IRFU3709ZC
IRFU3709ZC

isc N-Channel MOSFET Transistor IRFU3709ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N7124

 

 
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