IXFP12N65X2 Specs and Replacement

Type Designator: IXFP12N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 712 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: TO-220

IXFP12N65X2 substitution

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IXFP12N65X2 datasheet

 ..1. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFP12N65X2

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr... See More ⇒

 ..2. Size:253K  inchange semiconductor
 ixfp12n65x2.pdf pdf_icon

IXFP12N65X2

isc N-Channel MOSFET Transistor IXFP12N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 30 V... See More ⇒

 0.1. Size:200K  inchange semiconductor
 ixfp12n65x2m.pdf pdf_icon

IXFP12N65X2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP12N65X2M FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G... See More ⇒

 9.1. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFP12N65X2

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

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Detailed specifications: IRFU4510, IRFU7440, IRFU7740, IRFU7746, IRL40S212, IRL60S216, IRLS3813, IXFH56N30X3, IRFP250, IXFP20N85X, IXFP36N20X3M, IXFP72N20X3M, IXFQ8N85X, IXFY36N20X3, IXTA12N70X2, IXTP230N04T4M, MFT60N12T22FS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.