CJ2310 Datasheet. Specs and Replacement
Type Designator: CJ2310 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: SOT-23
CJ2310 substitution
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CJ2310 datasheet
cj2310.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2310 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 105m @10V 60 V 3A 1. GATE 125m @4.5V 2. SOURCE 3. DRAIN DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is s... See More ⇒
cj2312.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V(D-S) MOSFET SOT-23 APPLICATIONS DC/DC Converters Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING S12 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Volt... See More ⇒
cj2312.pdf
CJ2312 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co... See More ⇒
Detailed specifications: CJ2301S, CJ2302, CJ2302S, CJ2303, CJ2304, CJ2305, CJ2306, CJ2307, IRF730, CJ2312, CJ2321, CJ2333, CJ3134K, CJ3134KW, CJ3139K, CJ3139KW, CJ3400
Keywords - CJ2310 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
