All MOSFET. SDF9N100JEA-S Datasheet

 

SDF9N100JEA-S Datasheet and Replacement


   Type Designator: SDF9N100JEA-S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110(max) nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO254
 

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SDF9N100JEA-S Datasheet (PDF)

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SDF9N100JEA-S

 6.2. Size:159K  solitron
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 6.3. Size:57K  solitron
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SDF9N100JEA-S

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Datasheet: SDF9140 , SDF9230JAA , SDF9230JAB , SDF9240 , SDF9N100GAF-D , SDF9N100GAF-S , SDF9N100GAF-U , SDF9N100JEA-D , AON6414A , SDF9N100JEA-U , SDF9N100JEB-D , SDF9N100JEB-S , SDF9N100JEB-U , SDF9N100JEC-D , SDF9N100JEC-S , SDF9N100JEC-U , SDF9N100JED-D .

History: JCS7HN60S

Keywords - SDF9N100JEA-S MOSFET datasheet

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