All MOSFET. CJA9451 Datasheet

 

CJA9451 Datasheet and Replacement


   Type Designator: CJA9451
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: SOT-89
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CJA9451 Datasheet (PDF)

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CJA9451

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SOT-89-3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (

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CJA9451

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 38m@10V20V 50m@4.5V4A80m@2.5V1. GATE 2. DRAIN Description 3. SOURCE The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low

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History: GSM3436 | APM4050APUC | FDMC8015L | 2N4338 | SI1402DH | MTN4N60AE3 | NTJD4105C

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