CJA9451 Datasheet and Replacement
Type Designator: CJA9451
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: SOT-89
CJA9451 substitution
CJA9451 Datasheet (PDF)
cja9451.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SOT-89-3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (
cja9452.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 38m@10V20V 50m@4.5V4A80m@2.5V1. GATE 2. DRAIN Description 3. SOURCE The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low
Datasheet: CJ3415 , CJ3420 , CJ4153 , CJ502K , CJ8810 , CJ8820 , CJA03N10 , CJA03N10-HF , STP75NF75 , CJA9452 , CJB01N65B , CJB02N65 , CJB04N60A , CJB04N65 , CJB04N65A , CJB08N65 , CJB10N60 .
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