SDF9N100JEB-S Datasheet and Replacement
Type Designator: SDF9N100JEB-S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110(max) nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO254
SDF9N100JEB-S substitution
SDF9N100JEB-S Datasheet (PDF)
Datasheet: SDF9240 , SDF9N100GAF-D , SDF9N100GAF-S , SDF9N100GAF-U , SDF9N100JEA-D , SDF9N100JEA-S , SDF9N100JEA-U , SDF9N100JEB-D , IRFB4115 , SDF9N100JEB-U , SDF9N100JEC-D , SDF9N100JEC-S , SDF9N100JEC-U , SDF9N100JED-D , SDF9N100JED-S , SDF9N100JED-U , SDF9N100SXH .
History: CED11P20
Keywords - SDF9N100JEB-S MOSFET datasheet
SDF9N100JEB-S cross reference
SDF9N100JEB-S equivalent finder
SDF9N100JEB-S lookup
SDF9N100JEB-S substitution
SDF9N100JEB-S replacement
History: CED11P20



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