All MOSFET. CJB04N65 Datasheet

 

CJB04N65 Datasheet and Replacement


   Type Designator: CJB04N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-263
 

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CJB04N65 Datasheet (PDF)

 ..1. Size:310K  jiangsu
 cjb04n65 cjb04n65a.pdf pdf_icon

CJB04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N65A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 7.1. Size:333K  jiangsu
 cjb04n60a.pdf pdf_icon

CJB04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

Datasheet: CJ8820 , CJA03N10 , CJA03N10-HF , CJA9451 , CJA9452 , CJB01N65B , CJB02N65 , CJB04N60A , STP75NF75 , CJB04N65A , CJB08N65 , CJB10N60 , CJB71N90 , CJD01N60 , CJD01N65B , CJD01N80 , CJD02N60 .

History: CJB08N65 | CJB71N90 | TDM3510 | GSM3402A | HCS60R099 | CJB04N65A | AP9430GH-HF

Keywords - CJB04N65 MOSFET datasheet

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