All MOSFET. CJD04N60A Datasheet

 

CJD04N60A Datasheet and Replacement


   Type Designator: CJD04N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-251S
 

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CJD04N60A Datasheet (PDF)

 ..1. Size:421K  jiangsu
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CJD04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 6.1. Size:640K  jiangsu
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CJD04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETSCJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery

 6.2. Size:267K  jiangsu
 cjd04n60b.pdf pdf_icon

CJD04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for

 7.1. Size:439K  jiangsu
 cjd04n65.pdf pdf_icon

CJD04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET TO-251SGENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high spe

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Datasheet: CJB10N60 , CJB71N90 , CJD01N60 , CJD01N65B , CJD01N80 , CJD02N60 , CJD02N65 , CJD04N60 , K4145 , CJD04N60B , CJD04N65 , CJD04N65A , CJD05N60B , CJD4410 , CJD4435 , CJI02N60 , CJK2305 .

History: IRFH7190

Keywords - CJD04N60A MOSFET datasheet

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