CJD04N65A Datasheet. Specs and Replacement

Type Designator: CJD04N65A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-251

CJD04N65A substitution

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CJD04N65A datasheet

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CJD04N65A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD04N65A N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒

 6.1. Size:439K  jiangsu
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CJD04N65A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high spe... See More ⇒

 7.1. Size:421K  jiangsu
 cjd04n60a.pdf pdf_icon

CJD04N65A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s... See More ⇒

 7.2. Size:640K  jiangsu
 cjd04n60.pdf pdf_icon

CJD04N65A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery ... See More ⇒

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Detailed specifications: CJD01N65B, CJD01N80, CJD02N60, CJD02N65, CJD04N60, CJD04N60A, CJD04N60B, CJD04N65, 12N60, CJD05N60B, CJD4410, CJD4435, CJI02N60, CJK2305, CJK3407, CJK3415, CJL3407

Keywords - CJD04N65A MOSFET specs

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