All MOSFET. CJPF04N65 Datasheet

 

CJPF04N65 Datasheet and Replacement


   Type Designator: CJPF04N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220F
 

 CJPF04N65 substitution

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CJPF04N65 Datasheet (PDF)

 ..1. Size:423K  jiangsu
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CJPF04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.1. Size:305K  jiangsu
cjpf04n65a.pdf pdf_icon

CJPF04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 6.1. Size:315K  jiangsu
cjpf04n60a.pdf pdf_icon

CJPF04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 6.2. Size:501K  jiangsu
cjpf04n60.pdf pdf_icon

CJPF04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

Datasheet: CJP75N80 , CJP85N80 , CJPF01N65B , CJPF02N60 , CJPF02N65 , CJPF03N80 , CJPF04N60 , CJPF04N60A , IRF1405 , CJPF04N65A , CJPF04N80 , CJPF05N60 , CJPF05N60B , CJPF05N65 , CJPF07N60 , CJPF07N65 , CJPF08N60 .

History: AP4959GM | DMP6023LE | FDS6162N7 | PMXB75UPE | AM50P04-16PCFM | CJS8810 | SUU10P10-195

Keywords - CJPF04N65 MOSFET datasheet

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