CJPF12N60 Datasheet. Specs and Replacement

Type Designator: CJPF12N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220F

CJPF12N60 substitution

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CJPF12N60 datasheet

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CJPF12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 / F Plastic-Encapsulate MOSFETS CJP12N60,CJPF12N60 600V N-Channel Power MOSFET General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and commutation mode. T... See More ⇒

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CJPF12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s... See More ⇒

 9.1. Size:390K  jiangsu
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CJPF12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s... See More ⇒

 9.2. Size:485K  jiangsu
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CJPF12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220F Description The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character... See More ⇒

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Detailed specifications: CJPF05N60B, CJPF05N65, CJPF07N60, CJPF07N65, CJPF08N60, CJPF08N65, CJPF10N60, CJPF10N65, IRFP064N, CJPF12N65, CJQ4410, CJQ4435, CJQ4438, CJQ4459, CJQ9435, CJU01N60, CJU01N65B

Keywords - CJPF12N60 MOSFET specs

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