All MOSFET. CJQ4438 Datasheet

 

CJQ4438 Datasheet and Replacement


   Type Designator: CJQ4438
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP-8
 

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CJQ4438 Datasheet (PDF)

 ..1. Size:653K  jiangsu
cjq4438.pdf pdf_icon

CJQ4438

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m@10V60V 8.2A@4.5V36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate ChargeEquivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d

 8.1. Size:1856K  jiangsu
cjq4435.pdf pdf_icon

CJQ4438

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

 8.2. Size:2130K  jiangsu
cjq4435s.pdf pdf_icon

CJQ4438

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

 9.1. Size:2418K  jiangsu
cjq4406.pdf pdf_icon

CJQ4438

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFETID V (BR)DSS RDS(on)MAX SOP8 12m@10V30V10A16m@4.5VDESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.APPLIC

Datasheet: CJPF08N60 , CJPF08N65 , CJPF10N60 , CJPF10N65 , CJPF12N60 , CJPF12N65 , CJQ4410 , CJQ4435 , IRF3205 , CJQ4459 , CJQ9435 , CJU01N60 , CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , CJU02N80 .

History: MP4N150

Keywords - CJQ4438 MOSFET datasheet

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