CJU01N60 Datasheet. Specs and Replacement

Type Designator: CJU01N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: TO-252

CJU01N60 substitution

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CJU01N60 datasheet

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CJU01N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252-2L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withstan... See More ⇒

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CJU01N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N65B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒

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CJU01N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU01N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also... See More ⇒

Detailed specifications: CJPF10N65, CJPF12N60, CJPF12N65, CJQ4410, CJQ4435, CJQ4438, CJQ4459, CJQ9435, 20N60, CJU01N65B, CJU01N80, CJU02N60, CJU02N65, CJU02N80, CJU03N80, CJU04N60, CJU04N60A

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